Multi-Crystalline Ingot Furnace
Original price was: £1,500,000.00.£750,000.00Current price is: £750,000.00.
Technical Data
Dimensions and Weights
Charge weight 450 kg | max. 600 kg
Crucible dimensions [standard Gen5] 880 mm × 880 mm × 420 mm [L×W×H]
Furnace dimensions in serial order ~ 5,400 mm x ~ 4,000 mm x ~ 4,400 mm [L x W x H]
Footprint single furnace 20.16 m²
Lifting height [for operation] ~ 6,000 mm
Total furnace weight ~ 17,500 kg 1
Infrastructure Requirements
Power supply 300 kVA by 3 × 400 VAC ± 5 % at 50 Hz
Cooling water supply ~ 280 l/min at 4.5 bar
Argon consumption [average] ~ 30 sl/min at 5 bar
Compressed air 7 bar
Description
The centrotherm SiTec multi-crystalline ingot furnace is a key equipment for photovoltaic silicon ingot and wafer facilities. The furnace grows multi-crystalline silicon ingots by vertical gradient directional solidifica- tion of silicon melt in silica crucible after melting of polysilicon chunks. The multi-crystalline ingot furnace is already prepared to grow pseudo- mono ingots. The process consists of heating, melting, growing, anne- aling and cooling stages. Process temperature varies up to 1,600 ºC and process pressure ranges from 0.1 to 600 mbar.
The furnace consists of a graphite hot zone located in a stain-
less steel vacuum chamber supported by a base frame. The hot zone contains 3 independent active thermal elements – side resistive heater, bottom resistive heater and bottom active cooling unit. The hot zone is designed in modular structure and optimized for ingot generation Gen5 and 450 kg basic charge weight.
The furnace has integrated water cooling, argon flow, vacuum pump, power supply, temperature monitoring and fully automated process control systems. The base frame is equipped with an electro- mechanical opening and closing mechanism and with an integrated tool
for top loading and unloading of the charged crucible.
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